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| NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H Marking EAs EBs ECs EFs EGs EHs Ordering Code (tape and reel) Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 65 BCW 66 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5 Values BCW 66 45 75 5 800 1 100 200 330 150 - 65 ... + 150 Unit V mA A mA mW C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 A BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 C VCB = 45 V, TA = 150 C BCW 65 BCW 66 BCW 65 BCW 66 IEB0 hFE 35 50 80 75 110 180 100 160 250 35 60 100 - - - - - - 160 250 350 - - - - - - - - - 250 400 630 - - - V(BR)CE0 32 45 V(BR)CB0 60 75 V(BR)EB0 ICB0 - - - - - - - - - - 20 20 20 20 20 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 Emitter-base cutoff current, VEB = 4 V DC current gain1) IC = 100 A, VCE = 10 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 10 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 100 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 500 mA, VCE = 2 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H nA - 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 3 BCW 65 BCW 66 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo - - - 170 6 60 - - - MHz pF VCEsat - - VBEsat - - - - 1.25 2 - - 0.3 0.7 V Values typ. max. Unit 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 4 BCW 65 BCW 66 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB = VCEmax Semiconductor Group 5 BCW 65 BCW 66 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 6 |
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